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SD2943
RF Power Transistor HF/VHF/UHF N - Channel MOSFETs
General Features

HIGH POWER CAPABILITY POUT = 350W MIN. WITH 22dB GAIN @ 30 MHz PSAT = 450 W LOW R DS(on) THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION
M177 Epoxy sealed

Pin Connection
4 1
5
Description
The SD2943 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up 150 MHz. SD2943 offers a 20% higher power saturation than SD2933, it is idea for ISM applications where reliability and ruggedness are critical factors. 1. Drain 2. Source 3. Gate
3
2
4. Source 5. Source
Order Codes
Part Number SD2943 Marking SD2943 Package M177 Packaging Plastic Tray
October 2005
Rev 1 1/14
www.st.com 14
SD2943
Contents
1 Electrical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 1.3 Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics (TCASE = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 3 4 5 6
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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SD2943
1 Electrical Data
1
1.1
Table 1.
Electrical Data
Maximum Rating
Absolute Maximum Rating (TCASE = 25C)
Symbol V(BR)DSS(1) VDGR(2) VGS ID PDISS Tj EAS EAR (2) TSTG
1. TJ = 150 C
Parameter Drain Source Voltage Drain-Gate Voltage (RGS = 1M) Gate-Source Volatge Drain Current Power Dissipation Max. Operating Junction Temperature Avalanche Energy, Single Pulse (ID = 60A) Avalanche Energy, Repetitive Storage Temperature
Value 130 130 20 40 648 200 1500 50 -65 to +150
Unit V V V A W C mJ mJ C
2. Repetitive rating: Pulse width limited by maximum junction temperature; Repetitive avalanche causes additional power losses that can be calculated as: PAV = EAR * f
1.2
Table 2.
Thermal Data
Thermal data
Parameter Junction to Case thermal resistance Value 0.27 Unit C/W
Symbol RthJC
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1 Electrical Data
SD2943
1.3
Table 3.
Electrical Characteristics (TCASE = 25C)
Static
Test Conditions VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V IDS = 200 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 20 A ID = 10 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 10 830 470 35 2 Min. 130 100 500 4 2 Typ. Max. Unit V A nA V V mho pF pF pF
Symbol V(BR)DSS(1) IDSS IGSS VGS(Q) VDS(ON) G FS(2) CISS COSS CRSS
1. TJ = 150C 2. GFS sorts for each unit see Table 5
Table 4.
Symbol POUT G PS hD Load Mismatch
Dynamic
Test Conditions VDD = 50 V VDD = 50 V VDD = 50 V VDD = 50 V IDQ = 250 mA IDQ = 250 mA POUT = 350 W IDQ = 250 mA POUT = 350 W IDQ = 250 mA POUT = 350 W f = 30 MHz f = 30 MHz f = 30 MHz f = 30 MHz Min. 350 22 60 3:1 Typ. 450 25 65 Max. Unit W dB % VSWR
All Phase Angles
Table 5.
GFS SORTS
Value 10 / 10.99 11 / 11.99 12 / 12.99 13 / 13.99 14 / 14.99 15 / 15.99 16 / 16.99 17 / 18
Symbol A B C D E F G H
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SD2943
2 Impedance
2
Figure 1.
Impedance
Impedance Data Schematic
D ZDL
Typical Input Impedance
Typical Drain Load Impedance
G ZIN
S
Table 6.
f
Impedance Data
ZIN () 1.3 - j 2.9 1.4 - j 2.4 1.4 - j 2.2 ZDL () 3.1 + j 2.3 1.9 + j 1.4 1.7 +j 1.6
30 MHz 108 MHz 175 MHz
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3 Typical Performance
SD2943
3
Typical Performance
Figure 2.
Capacitance Vs Drain Voltage
Figure 3.
Drain Current Vs Gate Voltage
10000
40 Vds = 10 V 35
CISS
1000 Capacitance (pF) COSS 100
30 25 Id (A)
CRSS
20 15 10 5 0 Tc = +20 C
10
Freq = 1 MHz 1 0 4 8 12 16 20 24 28 32 Vdd (V) 36 40 44 48 52 56
Tc = +80 C
Tc = -20 C
0
1
2
3 Vgs (V)
4
5
6
Figure 4.
Gate-Source Voltage Vs Case Temp. Figure 5.
Max. Therm. Resist. Vs Case Temp.
Vgs, GATE-SOURCE VOLTAGE (NORMALIZED)
1.15 1.1 1.05 1 0.95 0.9
0.33
Id= 12 A Id= 10 A
0.32
RTH(j-c) (C/W)
Id= 7 A Id= 15 A Id= 5 A
0.31 0.3 0.29 0.28 0.27
Id=.1 A Id= 4 A Vdd= 10 V Id= 3 A Id= 2 A Id= 1 A Id=.25 A
0.85 0.8 -25 0 25 50
75
100
0.26 25 30 35 40 45 50 55 60 65 70 75 80 85
Tc, CASE TEMPERATURE (C)
Tc, CASE TEMPERATURE (C)
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SD2943
Figure 6.
500 450 400 350 Pout (W) Vdd = 50 V
3 Typical Performance
Pout Vs Input Power & Drain Voltage Figure 7.
500
Pout Vs Input Power & Case Temp.
Tc = +25 C 450 400 350 Pout (W) 300 250 200 150 100
Freq = 30 MHz Idq = 250 mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tc = -20 C Tc = +80 C
300 250 200 150 100 50 0 Pin (W) Vdd = 40 V
50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Freq = 30 MHz Vdd = 50 V Idq = 250 mA 3.5 4.0 4.5
Pin (W)
Table 7.
Efficiency Vs Pout
Figure 8.
Power Gain Vs Pout & Case Temp.
80 70 Tc = +25 C 60 50
30 28 26 24 Gain (dB) Tc = -20 C 22 20 18
Freq = 30 MHz Vdd = 50 V Idq = 250 mA 0 50 100 150 200 250 Pout (W) 300 350 400 450 500
Tc = +25 C
Nd (%)
40 30 20 10 0
Tc = +80 C
16 14 0 50 100 150 200 250 Pout (W) 300 350
Freq = 30 MHz Vdd = 50 V Idq = 250 mA 400 450 500
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3 Typical Performance
SD2943
Figure 10. Pout Vs Drain Voltage
Figure 9.
Pout Vs Gate Voltage
440 Tc = -20 C 400 360 320 Tc = +25 C
440 400 360 320 Freq = 30 MHz Idq = 250mA Pin = 2.2 W
280 Pout (W)
Pout (W)
240 200 160 120 80 40 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5
Tc = +80 C
280 Pin = 1.1 W 240 200
Freq = 30 MHz Pin = 1.1 W Vdd = 50 V Idq = 250 mA 2 2.5 3 3.5
160 120 80 26 28 30 32 34 36 38 40 42
Pin = 0.55 W
44
46
48
50
52
Vgs (V)
Vdd (V)
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SD2943
4 Test Circuit
4
Test Circuit
Figure 11. 30 MHz Test Circuit Schematic
Note: 1 Dimension at component symbol are reference for component placement. 2 Gap between group and trasmission files are 0.056[1.42] typ. 3 Transmission lime are not 1:1 scale. 4 Input and output trasmission line are 50
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4 Test Circuit
SD2943
30 MHz Test Circuit Component Part List
Description 0.01 F / 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR 750 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
Table 8.
Symbol C1,C9 C2, C3 C4
C5,C10,C11,C14,C16 10000 pF ATC 200B SURFACE MOUNT CERAMIC CHIP CAPACITOR C6 C7 C8 C12 C13 C15 R1,R3 R2 T1 T2 L1 L2 RFC1,RFC2 FB1 FB2 PCB 510 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 175-680 pF TYPE 46 STANDARD TRIMMER CAPACITOR 47 F / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 1200 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 F / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 1 K 1 W SURFACE MOUNT CHIP RESISTOR 560 2 W WIRE-WOUND AXILS LEAD RESISTOR HF 2-30 MHz SURFACE MOUNT 9:1 TRANSFORMER RG - 142B/U 50 COAXIAL CABLE OD = 0.165[4.18] L 15"[381.00] COVERED WITH 15"[381.00] TINNED COPPER TUBULAR BRAND 13/65" [5.1] WIDTH 1 3/4 TURN AIR-WOUND 16 AWG ID = 0.219 [5.56] POLY-COATED MAGNET WIRE 1 3/4 TURN AIR-WOUND 12 AWG ID = 0.250 [6.34] BUS BAR WIRE 3 TURNS 14 AWG WIRE THROUGH FAIR RITE TOROID SURFACE MOUNT EMI SHIELD BEAD TOROID ULTRALAM 2000. 0.030" THK,
r = 2.55, 2 Oz ED CU BOTH SIDES
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SD2943
Figure 12. 30 MHz Test Circuit Photomaster
4 Test Circuit
6.4 inches
Figure 13. 30 MHz Test Circuit
4 inches
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5 Mechanical Data
SD2943
5
Table 9.
DIM.
Mechanical Data
M177 (.550 DIA 4/L N/HERM W/FLG)
mm. MIN. A B C D E F G H I J K 27.43 15.88 5.72 6.73 21.84 28.70 13.84 0.08 2.49 3.81 TYP MAX. 5.97 6.96 22.10 28.96 14.10 0.18 2.74 4.32 7.11 28.45 16.13 1.080 0.625 MIN. 0.225 0.265 0.860 1.130 0.545 0.003 0.098 0.150 inch TYP MAX. 0.235 0.275 0.870 1.140 0.555 0.007 0.108 0.170 0.280 1.120 0.635
Figure 14. M177 Package Dimensions
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SD2943
6 Revision History
6
Revision History
Date 18 Oct 2005 Revision 1 Description of Changes First Issue.
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6 Revision History
SD2943
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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